Silicon Wafer (P-type) Unannealed
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Description
The Silicon Wafer (P-type) Unannealed can be made from a silicon wafer using the ion beam and bags of boron or indium. After the ion implantation process, the silicon crystal is disorganized by the ion's impacts. During the annealing process the wafer is heated and cooled several times to reorganize the crystal lattice. The Silicon Wafer (P-type) Unannealed can be annealed in the annealing furnace.
Properties
| Name | Value |
|---|---|
| Release Version | 1.3.2 |
Recipes
Ion Beam
| Outputs | Components | Recipe |
|---|---|---|
  1  | ||
1 |
Annealing Furnace
| Outputs | Components | Recipe |
|---|---|---|
 1 |