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− | The '''Silicon Wafer (P-type) Unannealed''' can be made from a [[Silicon Wafer|silicon wafer]] using the [[Ion Beam|ion beam]] and bags of [[Bag (Boron)|boron]] and [[Bag (Indium)|indium]]. After the ion implantation process, the silicon crystal is disorganized by the ion's impacts. During the annealing process the wafer is heated and cooled several times to reorganize the crystal lattice. The '''Silicon Wafer (P-type) Unannealed''' can be annealed in the [[Annealing Furnace|annealing furnace]]. | + | The '''Silicon Wafer (P-type) Unannealed''' can be made from a [[Silicon Wafer|silicon wafer]] using the [[Ion Beam|ion beam]] and bags of [[Bag (Boron)|boron]] or [[Bag (Indium)|indium]]. After the ion implantation process, the silicon crystal is disorganized by the ion's impacts. During the annealing process the wafer is heated and cooled several times to reorganize the crystal lattice. The '''Silicon Wafer (P-type) Unannealed''' can be annealed in the [[Annealing Furnace|annealing furnace]]. |
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Revision as of 00:17, 19 April 2024
Description
The Silicon Wafer (P-type) Unannealed can be made from a silicon wafer using the ion beam and bags of boron or indium. After the ion implantation process, the silicon crystal is disorganized by the ion's impacts. During the annealing process the wafer is heated and cooled several times to reorganize the crystal lattice. The Silicon Wafer (P-type) Unannealed can be annealed in the annealing furnace.
Properties
Name
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Value
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Release Version
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1.3.2
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Recipes
Ion Beam
Outputs
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Components
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Recipe
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1
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1
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Annealing Furnace
Outputs
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Components
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Recipe
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1
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History
Gallery
References