Difference between revisions of "Silicon Wafer (P-type) SiO2"
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==Description== | ==Description== | ||
The '''silicon wafer (P-type) SiO<sub>2</sub>''' can be made from s [[Silicon Wafer (P-type)|silicon safer (P-type)]] using the [[O2 Furnace|O<sub>2</sub> furnace]]. | The '''silicon wafer (P-type) SiO<sub>2</sub>''' can be made from s [[Silicon Wafer (P-type)|silicon safer (P-type)]] using the [[O2 Furnace|O<sub>2</sub> furnace]]. | ||
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| + | P type silicon is created when group III elements like boron, indium or gallium are used as the doping agent. The addition of these elements causes the silicon to have an abundance of positive charge carriers called “holes”. The “P” stands for “positive” [https://waferpro.com/what-are-p-type-and-n-type-silicon-wafers/]. | ||
The SiO<sub>2</sub> layer, also called dieletric layer, is isolating, functioning as a barrier for electrons [https://en.wikipedia.org/wiki/Dielectric]. | The SiO<sub>2</sub> layer, also called dieletric layer, is isolating, functioning as a barrier for electrons [https://en.wikipedia.org/wiki/Dielectric]. | ||
Revision as of 21:57, 18 April 2024
Description
The silicon wafer (P-type) SiO2 can be made from s silicon safer (P-type) using the O2 furnace.
P type silicon is created when group III elements like boron, indium or gallium are used as the doping agent. The addition of these elements causes the silicon to have an abundance of positive charge carriers called “holes”. The “P” stands for “positive” [1].
The SiO2 layer, also called dieletric layer, is isolating, functioning as a barrier for electrons [2].
Properties
| Name | Value |
|---|---|
| Release Version | 1.3.2 |
Recipes
O2 Furnace
| Outputs | Components | Recipe |
|---|---|---|
  1  |