Difference between revisions of "Silicon Wafer (P-type) SiO2"

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==Description==
 
==Description==
The '''silicon wafer (P-type) SiO<sub>2</sub>''' can be made from s [[Silicon Wafer (P-type)|silicon safer (P-type)]] using the [[O2 Furnace|O<sub>2</sub> furnace]]. P type silicon is created when group III elements like boron, indium or gallium are used as the doping agent. The addition of these elements causes the silicon to have an abundance of positive charge carriers called “holes”. The “P” stands for “positive” [https://waferpro.com/what-are-p-type-and-n-type-silicon-wafers/].
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The '''silicon wafer (P-type) SiO<sub>2</sub>''' can be made from s [[Silicon Wafer (P-type)|silicon safer (P-type)]] using the [[O2 Furnace|O<sub>2</sub> furnace]]. The SiO<sub>2</sub> layer, also called di-eletric layer, is isolating, functioning as a barrier for electrons [https://en.wikipedia.org/wiki/Dielectric].  
  
  

Revision as of 21:50, 18 April 2024

Description

The silicon wafer (P-type) SiO2 can be made from s silicon safer (P-type) using the O2 furnace. The SiO2 layer, also called di-eletric layer, is isolating, functioning as a barrier for electrons [1].


Properties

Name Value
Release Version 1.3.2

Recipes

Annealing Furnace

Outputs Components Recipe
Fuel
Cartridge (Nitrogen)
1
Silicon Wafer (P-type) Unannealed
Silicon Wafer (P-type)


O2 Furnace

Outputs Components Recipe
Fuel
Cartridge (Oxygen)
1
Silicon Wafer (P-type)
Silicon Wafer (P-type) SiO2

History

Gallery

References