Difference between revisions of "Silicon Wafer (P-type) SiO2"
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(Created page with "==Description== The '''silicon wafer (P-type) SiO<sub>2</sub>''' can be made from s silicon safer (P-type) using the O<sub>2</sub> Furnace|O<sub>2...") |
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==Description== | ==Description== | ||
| − | The '''silicon wafer (P-type) SiO<sub>2</sub>''' can be made from s [[Silicon Wafer (P-type)|silicon safer (P-type)]] using the [[ | + | The '''silicon wafer (P-type) SiO<sub>2</sub>''' can be made from s [[Silicon Wafer (P-type)|silicon safer (P-type)]] using the [[O2 Furnace|O<sub>2</sub> furnace]]. P type silicon is created when group III elements like boron, indium or gallium are used as the doping agent. The addition of these elements causes the silicon to have an abundance of positive charge carriers called “holes”. The “P” stands for “positive” [https://waferpro.com/what-are-p-type-and-n-type-silicon-wafers/]. |
Revision as of 21:47, 18 April 2024
Description
The silicon wafer (P-type) SiO2 can be made from s silicon safer (P-type) using the O2 furnace. P type silicon is created when group III elements like boron, indium or gallium are used as the doping agent. The addition of these elements causes the silicon to have an abundance of positive charge carriers called “holes”. The “P” stands for “positive” [1].
Properties
| Name | Value |
|---|---|
| Release Version | 1.3.2 |
Recipes
Annealing Furnace
| Outputs | Components | Recipe |
|---|---|---|
  1  |
O2 Furnace
| Outputs | Components | Recipe |
|---|---|---|
1 |