Difference between revisions of "Silicon Wafer (P-type) SiO2"
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The '''Silicon Wafer (P-type) SiO<sub>2</sub>''' can be made from a [[Silicon Wafer (P-type)|Silicon Wafer (P-type)]] using the [[O2 Furnace|O<sub>2</sub> furnace]]. | The '''Silicon Wafer (P-type) SiO<sub>2</sub>''' can be made from a [[Silicon Wafer (P-type)|Silicon Wafer (P-type)]] using the [[O2 Furnace|O<sub>2</sub> furnace]]. | ||
| − | P type silicon is created when group III elements such as boron, indium or gallium are used as the doping agent. The addition of these elements | + | P type silicon is created when group III elements such as boron, indium or gallium are used as the doping agent. The addition of these elements results in an excess of positive charge carriers in the silicon, known as "holes." The term "P" in "P-type" stands for “positive"[https://waferpro.com/what-are-p-type-and-n-type-silicon-wafers/]. |
The SiO<sub>2</sub> layer, also called dieletric layer, is an electrical insulator, functioning as a barrier for electrons [https://en.wikipedia.org/wiki/Dielectric]. | The SiO<sub>2</sub> layer, also called dieletric layer, is an electrical insulator, functioning as a barrier for electrons [https://en.wikipedia.org/wiki/Dielectric]. | ||
Latest revision as of 03:46, 19 April 2024
Description
The Silicon Wafer (P-type) SiO2 can be made from a Silicon Wafer (P-type) using the O2 furnace.
P type silicon is created when group III elements such as boron, indium or gallium are used as the doping agent. The addition of these elements results in an excess of positive charge carriers in the silicon, known as "holes." The term "P" in "P-type" stands for “positive"[1].
The SiO2 layer, also called dieletric layer, is an electrical insulator, functioning as a barrier for electrons [2].
Properties
| Name | Value |
|---|---|
| Release Version | 1.3.2 |
Recipes
O2 Furnace
| Outputs | Components | Recipe |
|---|---|---|
  1  |