Difference between revisions of "Silicon Wafer (P-type)"
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==Description== | ==Description== | ||
− | The '''Silicon Wafer (P-type)''' can be made by annealing the [[Silicon Wafer (P-type) Unannealed|unannealed silicon safer (P-type)]] using the [[Annealing Furnace|annealing furnace]]. P type silicon is created when group III elements like boron, indium or gallium are used as the doping agent. The addition of these elements causes the silicon to have an abundance of positive charge carriers called “holes”. The “P” stands for “positive” [https://waferpro.com/what-are-p-type-and-n-type-silicon-wafers/]. | + | The '''Silicon Wafer (P-type)''' can be made by annealing the [[Silicon Wafer (P-type) Unannealed|unannealed silicon safer (P-type)]] using the [[Annealing Furnace|annealing furnace]]. |
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+ | P type silicon is created when group III elements like boron, indium or gallium are used as the doping agent. The addition of these elements causes the silicon to have an abundance of positive charge carriers called “holes”. The “P” stands for “positive” [https://waferpro.com/what-are-p-type-and-n-type-silicon-wafers/]. | ||
Revision as of 21:57, 18 April 2024
Description
The Silicon Wafer (P-type) can be made by annealing the unannealed silicon safer (P-type) using the annealing furnace.
P type silicon is created when group III elements like boron, indium or gallium are used as the doping agent. The addition of these elements causes the silicon to have an abundance of positive charge carriers called “holes”. The “P” stands for “positive” [1].
Properties
Name | Value |
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Release Version | 1.3.2 |
Recipes
Annealing Furnace
Outputs | Components | Recipe |
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O2 Furnace
Outputs | Components | Recipe |
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