Difference between revisions of "Silicon Wafer (N-type) Unannealed"
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==Description== | ==Description== | ||
| − | The '''Silicon Wafer (N-type) Unannealed''' can be made from a [[Silicon Wafer|silicon wafer]] using the [[Ion Beam|ion beam]] and bags of [[Bag (Phosphorus)|phosphorus]], [[Bag (Antimony)|antimony]] or [[Bag (Arsenic)|arsenic]]. | + | The '''Silicon Wafer (N-type) Unannealed''' can be made from a [[Silicon Wafer|silicon wafer]] using the [[Ion Beam|ion beam]] and bags of [[Bag (Phosphorus)|phosphorus]], [[Bag (Antimony)|antimony]] or [[Bag (Arsenic)|arsenic]]. Following the ion implantation process, the silicon crystal structure becomes disorganized due to the impacts of the ions. During annealing, the wafer undergoes multiple heating and cooling cycles to reorganize the crystal lattice. |
| + | The '''Silicon Wafer (N-type) Unannealed''' can be annealed in the [[Annealing Furnace|annealing furnace]]. | ||
==Properties== | ==Properties== | ||
Revision as of 03:52, 19 April 2024
Description
The Silicon Wafer (N-type) Unannealed can be made from a silicon wafer using the ion beam and bags of phosphorus, antimony or arsenic. Following the ion implantation process, the silicon crystal structure becomes disorganized due to the impacts of the ions. During annealing, the wafer undergoes multiple heating and cooling cycles to reorganize the crystal lattice.
The Silicon Wafer (N-type) Unannealed can be annealed in the annealing furnace.
Properties
| Name | Value |
|---|---|
| Release Version | 1.3.2 |
Recipes
Ion Beam
| Outputs | Components | Recipe |
|---|---|---|
  1  | ||
1 | ||
1 |
Annealing Furnace
| Outputs | Components | Recipe |
|---|---|---|
 1 |