Silicon Wafer (N-type) Unannealed
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Description
The Silicon Wafer (N-type) Unannealed can be made from a silicon wafer using the ion beam with the addition of bags of phosphorus, antimony or arsenic. Following the ion implantation process, the silicon crystal structure becomes disorganized due to the impacts of the ions. During annealing, the wafer undergoes multiple heating and cooling cycles to reorganize the crystal lattice.
The Silicon Wafer (N-type) Unannealed can be annealed in the annealing furnace.
Properties
| Name | Value |
|---|---|
| Release Version | 1.3.2 |
Recipes
Ion Beam
| Outputs | Components | Recipe |
|---|---|---|
  1  | ||
1 | ||
1 |
Annealing Furnace
| Outputs | Components | Recipe |
|---|---|---|
 1 |