NAND
Description
The not-and logic gates (NANDs) can be used to create memory modules like volatile memory dual in-line memory modules (DIMMs) and non-volatile memory solid state drives (SSDs).
Recipes
The starting point for the NAND is a P-type Silicon Wafer with a SiO2 layer.
- Step 1.0 Get the Mask (NAND 1st well) from the Mask Writer.
Mask Writer
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- Step 1.1 Apply a positive photoresist vial to the silicon safer (P-type) SiO2 in the Chemical Solution Deposition machine and obtain the silicon wafer (P-type) SiO2 P-photoresist.
Chemical Solution Deposition
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- Step 1.2 Use the silicon wafer (P-type) SiO2 P-photoresist, Mask (NAND 1st well) and a UV bulb in the Stepper to imprint the pattern and obtain the Silicon Wafer NAND 1.2. For positive photoresist, the UV light will harden and unexposed positive photoresist is soft and easily removable. The opposite occurs in negative photoresist.
Stepper
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- Step 1.3 Use the silicon wafer NAND 1.2 and positive photoresist developer vial in the Chemical Processor to remove the unexposed photoresist and obtain silicon wafer NAND 1.3.
Chemical Processor
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- Step 1.4 Use the silicon wafer NAND 1.3 and ammonium fluoride etchant vial in the Chemical Processor to etch the 1st wells and obtain silicon wafer NAND 1.4.
Chemical Processor
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- Step 1.5 Use the silicon wafer NAND 1.4 and a photoresist stripper SPM vial in the Chemical Processor to remove the exposed photoresist and obtain silicon wafer NAND 1.5.
Chemical Processor
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- Step 1.6 Use the silicon wafer NAND 1.5 in the wafer washer to clean the wafer of photoresist residues and obtain silicon wafer NAND 1.6.
Wafer Washer
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- Step 1.7 Use the silicon wafer NAND 1.6 and an oxygen cartridge in the O2 furnace to grow a SiO2 layer in the wafer and obtain silicon wafer NAND 1.7.
O2 Furnace
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- Step 1.8 Use the silicon wafer NAND 1.7 and a silicon nugget for atomic layer deposition to fill the well with silicon and obtain silicon wafer NAND 1.8.
Atomic Layer Deposition
- Step 1.9 Use the silicon wafer NAND 1.8 and a bag of phosphorus in the Ion Beam to seed the 1st well with ions and obtain silicon wafer NAND 1.9.
Ion Implanter
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- Step 1.10 The implantation process disrupted the silicon crystal structure. To smooth and repair the silicon crystal, take the silicon wafer NAND 1.9 to the annealing furnace with an argon cartridge and obtain silicon wafer NAND 1.10.
Annealing Furnace
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- Step 1.11 Use the silicon wafer NAND 1.10 in the chemical mechanical polisher to strip the excess of metal and obtain a silicon wafer NAND 1.11.
Chemical Mechanical Polisher
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- Step 1.12 Use the silicon wafer NAND 1.11 in the wafer washer to clean the wafer of photoresist residues and obtain silicon wafer NAND 1.12.
Wafer Washer
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- Step 1.13 Use the silicon wafer NAND 1.12 in the scanning electron microscope to check if the 1st well was correctly created and obtain silicon wafer NAND 1.13.
Scanning Electron Microscope
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- Step 2.0 Get the Mask (NAND Metal) from the mask writer.
Mask Writer
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- Step 2.1 Use the silicon wafer NAND 1.13 and a negative photoresist vial in the chemical solution deposition machine to obtain the silicon wafer NAND 2.1.
Chemical Solution Deposition
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- Step 2.2 Use the silicon wafer NAND 2.1, Mask (NAND Metal) and a 254 UV bulb in the Stepper to imprint the etching pattern and obtain the silicon wafer NAND 2.2. For positive photoresist, the UV light will harden and unexposed positive photoresist is soft and easily removable. The opposite occurs in negative photoresist.
Stepper
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- Step 2.3 Use the silicon wafer NAND 2.2 and negative photoresist developer vial in the chemical processor to remove the unexposed photoresist and obtain silicon wafer NAND 2.3.
Chemical Processor
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- Step 2.4 Use the silicon wafer NAND 2.3 and a copper nugget for atomic layer deposition to create a copper layer in the wafer and obtain silicon wafer NAND 2.4.
Atomic Layer Deposition
- Step 2.5 Use the silicon wafer NAND 2.4 and photoresist stripper SPM vial) in the chemical processor to remove the exposed photoresist and obtain silicon wafer NAND 2.5.
Chemical Processor
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- Step 2.6 Use the silicon wafer NAND 2.5 in the wafer washer to clean the wafer of photoresist residues and obtain the silicon wafer NAND 2.6.
Wafer Washer
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- Step 2.7 Use the silicon wafer NAND 2.6 in the scanning electron microscope to check it for defects.
Scanning Electron Microscope
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- Step 2.8 Use the NAND die wafer in the stone cutter to obtain the NAND die.
Stonecutter
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- With the NAND die, enclosure and the interconnection array in the crafting table you can dreate memory chips with 1GB, 2Gb, 4Gb, 8Gb, 16Gb, 32GB, 64Gb.
History
Semiconductor module 1.0
Gallery
Links to learn more
Semiconductor fabrication 101 online course from Purdue University (MOC)
Semiconductor manufacturing from Duane Boning at MIT (Course materials)
Handbook of Silicon Wafer Cleaning Technology (Third Edition) (Book PDF)
Silicon Wafer Cleaning (Paper PDF)
Certification
Semiconductor fabrication 101 online course from Purdue University (MOC)
References
Semiconductor fabrication 101 online course from Purdue University (MOC)
The Amazing, Humble Silicon Wafer Video from Asianometry (Youtube video)