Difference between revisions of "Silicon Wafer (P-type) Unannealed"
Jump to navigation
Jump to search
(3 intermediate revisions by 2 users not shown) | |||
Line 1: | Line 1: | ||
==Description== | ==Description== | ||
− | The '''Silicon Wafer (P-type) Unannealed''' can be made from a [[Silicon Wafer|silicon wafer]] using the [[Ion Beam|ion beam]] | + | The '''Silicon Wafer (P-type) Unannealed''' can be made from a [[Silicon Wafer|silicon wafer]] using the [[Ion Beam|ion beam]] with the addition of bags of [[Bag (Boron)|boron]] or [[Bag (Indium)|indium]]. Following the ion implantation process, the silicon crystal structure becomes disorganized due to the impacts of the ions. During annealing, the wafer undergoes multiple heating and cooling cycles to reorganize the crystal lattice. |
+ | The '''Silicon Wafer (P-type) Unannealed''' can be annealed in the [[Annealing Furnace|annealing furnace]]. | ||
==Properties== | ==Properties== | ||
Line 32: | Line 33: | ||
{{Inventory/Slot|index=3|title=Silicon Wafer|image=silicon_wafer.png|link=Silicon Wafer}} | {{Inventory/Slot|index=3|title=Silicon Wafer|image=silicon_wafer.png|link=Silicon Wafer}} | ||
{{Inventory/Slot|index=4|title=Silicon Wafer (P-type) Unannealed|image=silicon_wafer.png|link=Silicon Wafer (P-type) Unannealed}} | {{Inventory/Slot|index=4|title=Silicon Wafer (P-type) Unannealed|image=silicon_wafer.png|link=Silicon Wafer (P-type) Unannealed}} | ||
− | |||
|type=ion-beam|shapeless=false}} | |type=ion-beam|shapeless=false}} | ||
|- | |- | ||
Line 45: | Line 45: | ||
{{Inventory/Slot|index=3|title=Silicon Wafer|image=silicon_wafer.png|link=Silicon Wafer}} | {{Inventory/Slot|index=3|title=Silicon Wafer|image=silicon_wafer.png|link=Silicon Wafer}} | ||
{{Inventory/Slot|index=4|title=Silicon Wafer (P-type) Unannealed|image=silicon_wafer.png|link=Silicon Wafer (P-type) Unannealed}} | {{Inventory/Slot|index=4|title=Silicon Wafer (P-type) Unannealed|image=silicon_wafer.png|link=Silicon Wafer (P-type) Unannealed}} | ||
− | |||
|type=ion-beam|shapeless=false}} | |type=ion-beam|shapeless=false}} | ||
|} | |} |
Latest revision as of 13:34, 19 April 2024
Description
The Silicon Wafer (P-type) Unannealed can be made from a silicon wafer using the ion beam with the addition of bags of boron or indium. Following the ion implantation process, the silicon crystal structure becomes disorganized due to the impacts of the ions. During annealing, the wafer undergoes multiple heating and cooling cycles to reorganize the crystal lattice.
The Silicon Wafer (P-type) Unannealed can be annealed in the annealing furnace.
Properties
Name | Value |
---|---|
Release Version | 1.3.2 |
Recipes
Ion Beam
Outputs | Components | Recipe |
---|---|---|
Annealing Furnace
Outputs | Components | Recipe |
---|---|---|