Difference between revisions of "Silicon Wafer (N-type) SiO2"
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==Description== | ==Description== | ||
| − | The '''silicon wafer (N-type) SiO<sub>2</sub>''' can be made from the [[Silicon Wafer (N-type)|silicon safer (N-type)]] using the [[O2 Furnace|O<sub>2</sub> furnace]]. It is the first step into the production of the [[Controller | + | The '''silicon wafer (N-type) SiO<sub>2</sub>''' can be made from the [[Silicon Wafer (N-type)|silicon safer (N-type)]] using the [[O2 Furnace|O<sub>2</sub> furnace]]. It is the first step into the production of the [[Controller chip|controller chip]. |
N-type silicon occurs when group V elements like phosphorus, arsenic, or antimony are used to dope the silicon. This gives the silicon an abundance of negative charge carriers called “electrons”. Hence the “N” for “negative” [https://waferpro.com/what-are-p-type-and-n-type-silicon-wafers/]. | N-type silicon occurs when group V elements like phosphorus, arsenic, or antimony are used to dope the silicon. This gives the silicon an abundance of negative charge carriers called “electrons”. Hence the “N” for “negative” [https://waferpro.com/what-are-p-type-and-n-type-silicon-wafers/]. | ||
Revision as of 22:45, 18 April 2024
Description
The silicon wafer (N-type) SiO2 can be made from the silicon safer (N-type) using the O2 furnace. It is the first step into the production of the [[Controller chip|controller chip].
N-type silicon occurs when group V elements like phosphorus, arsenic, or antimony are used to dope the silicon. This gives the silicon an abundance of negative charge carriers called “electrons”. Hence the “N” for “negative” [1].
The SiO2 layer, also called dieletric layer, is isolating, functioning as a barrier for electrons [2].
Properties
| Name | Value |
|---|---|
| Release Version | 1.3.2 |
Recipes
O2 Furnace
| Outputs | Components | Recipe |
|---|---|---|
  1  |
Contact Printer
| Outputs | Components | Recipe |
|---|---|---|
    |