Difference between revisions of "Silicon Wafer (N-type) SiO2"
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(Created page with "==Description== The '''silicon wafer (N-type) SiO<sub>2</sub>''' can be made from s silicon safer (N-type) using the O2 Furnace|O<sub>2</sub> furn...") |
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==Description== | ==Description== | ||
| − | The '''silicon wafer (N-type) SiO<sub>2</sub>''' can be made from | + | The '''silicon wafer (N-type) SiO<sub>2</sub>''' can be made from the [[Silicon Wafer (N-type)|silicon safer (N-type)]] using the [[O2 Furnace|O<sub>2</sub> furnace]]. This is the first step for the production of the [[Controller chip|controller chip]]. |
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| + | N-type silicon is formed when group V elements such as phosphorus, arsenic, or antimony are used as doping agent. This gives the silicon an abundance of negative charge carriers known as “electrons”. The term “N” in "N-type" stands for “negative” [https://waferpro.com/what-are-p-type-and-n-type-silicon-wafers/]. | ||
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| + | The SiO<sub>2</sub> layer, also called dieletric layer, is an electric insulator, functioning as a barrier for electrons [https://en.wikipedia.org/wiki/Dielectric]. | ||
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|} | |} | ||
| + | ===Contact Printer=== | ||
| + | {| class="wikitable sortable collapsible" | ||
| + | |- | ||
| + | ! Outputs | ||
| + | ! Components | ||
| + | ! Recipe | ||
| + | |- | ||
| + | | | ||
| + | * [[Image:silicon_wafer.png|link=Silicon Wafer Ctrl 1|32px|alt=Silicon Wafer Ctrl 1]|[[Silicon Wafer Ctrl 1|Silicon Wafer Ctrl 1]]]] [[Silicon Wafer Ctrl 1|Silicon Wafer Ctrl 1]] | ||
| + | | | ||
| + | * [[365 nm UV Bulbs]] | ||
| + | * [[Mask (Ctrl 1st well)]] | ||
| + | * [[Vial (Positive Photoresist)]] | ||
| + | * [[Silicon Wafer (N-type) SiO2]] | ||
| + | | {{Inventory| | ||
| + | {{Inventory/Slot|index=0|title=365 nm UV Bulbs|image=365_nm_uv_bulbs.png|link=365 nm UV Bulbs}} | ||
| + | {{Inventory/Slot|index=2|title=Mask (Ctrl 1st well)|image=Itemmask.png|link=Mask (Ctrl 1st well)}} | ||
| + | {{Inventory/Slot|index=1|title=Vial (Positive Photoresist)|image=Vessel_vial.png|link=Vial (Positive Photoresist)}} | ||
| + | {{Inventory/Slot|index=3|title=Silicon Wafer (N-type) SiO2|image=Waferitem.png|link=Silicon Wafer (N-type) SiO2}} | ||
| + | {{Inventory/Slot|index=5|title=Silicon Wafer Ctrl 1|image=Waferitem.png|link=v}} | ||
| + | {{Inventory/Slot|index=7|title=Fuel|image=Fuel.png|link=List of Fuels}} | ||
| + | |type=contact-printer|shapeless=false}} | ||
| + | |} | ||
==History== | ==History== | ||
Latest revision as of 04:02, 19 April 2024
Description
The silicon wafer (N-type) SiO2 can be made from the silicon safer (N-type) using the O2 furnace. This is the first step for the production of the controller chip.
N-type silicon is formed when group V elements such as phosphorus, arsenic, or antimony are used as doping agent. This gives the silicon an abundance of negative charge carriers known as “electrons”. The term “N” in "N-type" stands for “negative” [1].
The SiO2 layer, also called dieletric layer, is an electric insulator, functioning as a barrier for electrons [2].
Properties
| Name | Value |
|---|---|
| Release Version | 1.3.2 |
Recipes
O2 Furnace
| Outputs | Components | Recipe |
|---|---|---|
  1  |
Contact Printer
| Outputs | Components | Recipe |
|---|---|---|
    |