Difference between revisions of "Silicon Wafer fabrication"
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− | ; Step 1.9 To grow a layer of silicon dioxide take the doped and annealed [[Silicon Wafer|silicon wafers]] to the [[O2 Furnace|oxygen furnace]] with a [[Oxygen | + | ; Step 1.9 To grow a layer of silicon dioxide take the doped and annealed [[Silicon Wafer|silicon wafers]] to the [[O2 Furnace|oxygen furnace]] with a [[Cartridge Of Oxygen|oxygen cartridge]]. The dielectric layer of silicon oxide is an isolator. |
Revision as of 16:12, 7 June 2024
Description
These are the instructions to the creation of silicon wafers and their initial processing steps.
Recipes
The starting point for the silicon wafers is a sand, quartz or a mineral rich in silica.
- Step 1.0 Get some sand, quartz or a mineral rich in silica.
- Step 1.1 Purify the sand, quartz ou silica rich mineral in to silica sand in the crafting table.
Recipes
Crafting Table
Outputs | Components | Recipe |
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- Step 1.2 Use nine silica sand portions in the furnace to create a silicon ingot.
Furnace
Outputs | Components | Recipe |
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- Step 1.3 Use nine silicon ingots in the crafting table to obtain a silicon block .
Crafting Table
Outputs | Components | Recipe |
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- Step 1.4 Use a silicon block in the furnace to obtain the silicon boule .
Furnace
Outputs | Components | Recipe |
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- Step 1.5 Use a silicon boule in the stonecutter to obtain twenty five unpolishedsilicon wafers.
Stonecutter
Outputs | Components | Recipe |
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- Step 1.6 Polish the unpolished silicon wafers in the chemical mechanical polisher.
- Step 1.7 Take the the silicon wafers to the ion implanter for doping. You have two choices, use boron and indium to create P-type wafers and phosphorus, arsenic and antimony to create N-type wafer. In this step, the machine will bombard ions for them to be inserted in the silicon.
- Step 1.8 The implantation process will disorganize the silicon crystal structure. To smooth and repair the silicon crystal take the doped silicon wafers to the annealing furnace with a cartridge of Argon.
- Step 1.9 To grow a layer of silicon dioxide take the doped and annealed silicon wafers to the oxygen furnace with a oxygen cartridge. The dielectric layer of silicon oxide is an isolator.
You now have a Silicon wafer P-Type SiO or a Silicon wafer N-Type SiO. These are the starting components of semiconductor fabrication that fabs use. The Silicon wafer P-Type SiO can be used to create NANDs or arithmetic logical units (ALUs). The Silicon wafer N-Type SiO can be used to create the controller chip.
History
Semiconductor module 1.0