Difference between revisions of "Silicon Wafer fabrication"
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− | ; Step 1.5 Use a [[Silicon Boule|silicon boule]] in the [[Stonecutter|stonecutter]] to obtain twenty five [[Silicon Wafer| | + | ; Step 1.5 Use a [[Silicon Boule|silicon boule]] in the [[Stonecutter|stonecutter]] to obtain twenty five [[Unpolished Silicon Wafer|unpolishedsilicon wafers]]. |
===Stonecutter=== | ===Stonecutter=== | ||
Line 150: | Line 150: | ||
+ | ; Step 1.6 Polish the [[Unpolished Silicon Wafer|unpolished silicon wafers]] in the [[Chemical Mechanical Polisher|chemical mechanical polisher]]. | ||
+ | ; Step 1.7 Take the the [[Silicon Wafer|silicon wafers]] to the [[Ion Implanter|ion implanter]] for doping. You have two choices: use [[boron]] and [[indium]] to create P-type wafers and [[phosphorus]], [[arsenic]] and [[antimony]] to create N-type wafer. | ||
+ | In this step, the machine will bombard ions for them to be inserted in the silicon. | ||
+ | ; Step 1.8 The implantation process will disorganize the silicon crystal structure. To smooth and repair the silicon crystal take the doped [[Silicon Wafer|silicon wafers]] to the [[Annealing Furnace|annealing furnace]] with a cartridge of [[Argon]]. | ||
+ | |||
+ | ; Step 1.9 To grow a layer of silicon dioxide take the doped and annealed [[Silicon Wafer|silicon wafers]] to the [[O2 Furnace|furnace]]. The dielectric layer of silicon oxide is an isolator. | ||
+ | You now have a [[Silicon wafer P-Type SiO]] or a [[Silicon wafer N-Type SiO]]. These are the starting components of semiconductor fabrication that fabs use. The [[Silicon wafer P-Type SiO]] can be used to create [[NAND|NANDs]] or [[ALU|arithmetic logical units (ALUs)]]. The [[Silicon wafer N-Type SiO]] can be used to create the [[Controller Chip|controller chip]]. | ||
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Revision as of 16:06, 7 June 2024
Description
These are the instructions to the creation of silicon wafers and their initial processing steps.
Recipes
The starting point for the silicon wafers is a sand, quartz or a mineral rich in silica.
- Step 1.0 Get some sand, quartz or a mineral rich in silica.
- Step 1.1 Purify the sand, quartz ou silica rich mineral in to silica sand in the crafting table.
Recipes
Crafting Table
Outputs | Components | Recipe |
---|---|---|
| ||
| ||
|
- Step 1.2 Use nine silica sand portions in the furnace to create a silicon ingot.
Furnace
Outputs | Components | Recipe |
---|---|---|
- Step 1.3 Use nine silicon ingots in the crafting table to obtain a silicon block .
Crafting Table
Outputs | Components | Recipe |
---|---|---|
- Step 1.4 Use a silicon block in the furnace to obtain the silicon boule .
Furnace
Outputs | Components | Recipe |
---|---|---|
- Step 1.5 Use a silicon boule in the stonecutter to obtain twenty five unpolishedsilicon wafers.
Stonecutter
Outputs | Components | Recipe |
---|---|---|
- Step 1.6 Polish the unpolished silicon wafers in the chemical mechanical polisher.
- Step 1.7 Take the the silicon wafers to the ion implanter for doping. You have two choices
- use boron and indium to create P-type wafers and phosphorus, arsenic and antimony to create N-type wafer.
In this step, the machine will bombard ions for them to be inserted in the silicon.
- Step 1.8 The implantation process will disorganize the silicon crystal structure. To smooth and repair the silicon crystal take the doped silicon wafers to the annealing furnace with a cartridge of Argon.
- Step 1.9 To grow a layer of silicon dioxide take the doped and annealed silicon wafers to the furnace. The dielectric layer of silicon oxide is an isolator.
You now have a Silicon wafer P-Type SiO or a Silicon wafer N-Type SiO. These are the starting components of semiconductor fabrication that fabs use. The Silicon wafer P-Type SiO can be used to create NANDs or arithmetic logical units (ALUs). The Silicon wafer N-Type SiO can be used to create the controller chip.
History
Semiconductor module 1.0