Difference between revisions of "Silicon Wafer fabrication"
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− | ; Step 1.5 Use a [[Silicon Boule|silicon boule]] in the [[Stonecutter|stonecutter]] to obtain twenty five [[Unpolished Silicon Wafer| | + | ; Step 1.5 Use a [[Silicon Boule|silicon boule]] in the [[Stonecutter|stonecutter]] to obtain twenty five [[Unpolished Silicon Wafer|unpolished silicon wafers]]. |
===Stonecutter=== | ===Stonecutter=== | ||
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− | ; Step 1.7 Take the the [[Silicon Wafer|silicon wafers]] to the [[Ion Implanter|ion implanter]] for doping. You have two choices, use [[boron]] and [[indium]] to create P-type wafers and [[phosphorus]], [[arsenic]] and [[antimony]] to create N-type wafer. | + | ; Step 1.7 In this step, we will bombard the wafer with ions to insert them in the silicon. Take the the [[Silicon Wafer|silicon wafers]] to the [[Ion Implanter|ion implanter]] for doping. You have two choices, use [[boron]] and [[indium]] to create P-type wafers and [[phosphorus]], [[arsenic]] and [[antimony]] to create N-type wafer. To know which to choose, look to the end of this page. |
− | ; Step 1.8 The implantation process | + | ; Step 1.8 The implantation process disorganized the silicon crystal structure. To smooth and repair the silicon crystal take the doped [[Silicon Wafer|silicon wafers]] to the [[Annealing Furnace|annealing furnace]] with a [[Cartridge (Argon)|argon cartridge]]. |
− | ; Step 1.9 To grow a layer of silicon dioxide take the doped and annealed [[Silicon Wafer|silicon wafers]] to the [[O2 Furnace|oxygen furnace]] with a [[Cartridge (Oxygen)|oxygen cartridge]]. The dielectric layer of silicon | + | ; Step 1.9 To grow a layer of silicon dioxide take the doped and annealed [[Silicon Wafer|silicon wafers]] to the [[O2 Furnace|oxygen furnace]] with a [[Cartridge (Oxygen)|oxygen cartridge]]. The dielectric layer of silicon dioxide is an isolator, it will prevent electrons to pass trough. |
− | + | ===O2 Furnace=== | |
+ | {| class="wikitable sortable collapsible" | ||
+ | |- | ||
+ | ! Outputs | ||
+ | ! Components | ||
+ | ! Recipe | ||
+ | |- | ||
+ | | | ||
+ | * [[Image:silicon_wafer.png|link=v|32px|alt=Silicon Wafer (N-Type)]] [[Silicon Wafer(N-Type)]] | ||
+ | | | ||
+ | * [[Silicon Wafer Ctrl 1.7]] | ||
+ | | {{Inventory| | ||
+ | {{Inventory/Slot|index=2|title=Fuel|image=Fuel.png|link=List of Fuels}} | ||
+ | {{Inventory/Slot|index=0|title=Silicon Wafer (N-Type)|image=Silicon wafer blue.png|link=Silicon Wafer (N-Type)}} | ||
+ | {{Inventory/Slot|index=3|title=Silicon Wafer (N-Type) SiO2|image=Silicon wafer blue.png|link=Silicon Wafer (N-Type) SiO2}} | ||
+ | |type=o2_furnace|shapeless=false}} | ||
+ | |} | ||
− | You now have a [[Silicon wafer P-Type | + | You now have a [[Silicon wafer (P-Type) SiO2]] or a [[Silicon wafer (N-Type) SiO]]. These are the starting components of semiconductor fabrication that fabs use. The [[Silicon wafer (P-Type) SiO2]] can be used to create [[NAND|not-and logic gates (NANDs)]] or [[ALU|arithmetic logical units (ALUs)]]. The [[Silicon wafer (N-Type) SiO2]] can be used to create the [[Controller Chip|controller chip]]. |
Revision as of 19:43, 7 June 2024
Description
These are the instructions to the creation of silicon wafers and their initial processing steps.
Recipes
The starting point for the silicon wafers is a sand, quartz or a mineral rich in silica.
- Step 1.0 Get some sand, quartz or a mineral rich in silica.
- Step 1.1 Purify the sand, quartz ou silica rich mineral in to silica sand in the crafting table.
Recipes
Crafting Table
Outputs | Components | Recipe |
---|---|---|
|
- Step 1.2 Use nine silica sand portions in the furnace to create a silicon ingot.
Furnace
Outputs | Components | Recipe |
---|---|---|
- Step 1.3 Use nine silicon ingots in the crafting table to obtain a silicon block .
Crafting Table
Outputs | Components | Recipe |
---|---|---|
- Step 1.4 Use a silicon block in the furnace to obtain the silicon boule .
Furnace
Outputs | Components | Recipe |
---|---|---|
- Step 1.5 Use a silicon boule in the stonecutter to obtain twenty five unpolished silicon wafers.
Stonecutter
Outputs | Components | Recipe |
---|---|---|
- Step 1.6 Polish the unpolished silicon wafers in the chemical mechanical polisher.
- Step 1.7 In this step, we will bombard the wafer with ions to insert them in the silicon. Take the the silicon wafers to the ion implanter for doping. You have two choices, use boron and indium to create P-type wafers and phosphorus, arsenic and antimony to create N-type wafer. To know which to choose, look to the end of this page.
- Step 1.8 The implantation process disorganized the silicon crystal structure. To smooth and repair the silicon crystal take the doped silicon wafers to the annealing furnace with a argon cartridge.
- Step 1.9 To grow a layer of silicon dioxide take the doped and annealed silicon wafers to the oxygen furnace with a oxygen cartridge. The dielectric layer of silicon dioxide is an isolator, it will prevent electrons to pass trough.
O2 Furnace
Outputs | Components | Recipe |
---|---|---|
You now have a Silicon wafer (P-Type) SiO2 or a Silicon wafer (N-Type) SiO. These are the starting components of semiconductor fabrication that fabs use. The Silicon wafer (P-Type) SiO2 can be used to create not-and logic gates (NANDs) or arithmetic logical units (ALUs). The Silicon wafer (N-Type) SiO2 can be used to create the controller chip.
History
Semiconductor module 1.0