Difference between revisions of "Silicon Wafer (N-type) SiO2"
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==Description== | ==Description== | ||
− | The '''silicon wafer (N-type) SiO<sub>2</sub>''' can be made from | + | The '''silicon wafer (N-type) SiO<sub>2</sub>''' can be made from the [[Silicon Wafer (N-type)|silicon safer (N-type)]] using the [[O2 Furnace|O<sub>2</sub> furnace]]. This is the first step for the production of the [[Controller chip|controller chip]]. |
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+ | N-type silicon is formed when group V elements such as phosphorus, arsenic, or antimony are used as doping agent. This gives the silicon an abundance of negative charge carriers known as “electrons”. The term “N” in "N-type" stands for “negative” [https://waferpro.com/what-are-p-type-and-n-type-silicon-wafers/]. | ||
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+ | The SiO<sub>2</sub> layer, also called dieletric layer, is an electric insulator, functioning as a barrier for electrons [https://en.wikipedia.org/wiki/Dielectric]. | ||
Latest revision as of 04:02, 19 April 2024
Description
The silicon wafer (N-type) SiO2 can be made from the silicon safer (N-type) using the O2 furnace. This is the first step for the production of the controller chip.
N-type silicon is formed when group V elements such as phosphorus, arsenic, or antimony are used as doping agent. This gives the silicon an abundance of negative charge carriers known as “electrons”. The term “N” in "N-type" stands for “negative” [1].
The SiO2 layer, also called dieletric layer, is an electric insulator, functioning as a barrier for electrons [2].
Properties
Name | Value |
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Release Version | 1.3.2 |
Recipes
O2 Furnace
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Contact Printer
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