Difference between revisions of "Silicon Wafer (P-type) SiO2"

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(Created page with "==Description== The '''silicon wafer (P-type) SiO<sub>2</sub>''' can be made from s silicon safer (P-type) using the O<sub>2</sub> Furnace|O<sub>2...")
 
 
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==Description==
 
==Description==
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The '''silicon wafer (P-type) SiO<sub>2</sub>''' can be made from s [[Silicon Wafer (P-type)|silicon safer (P-type)]] using the [[O<sub>2</sub> Furnace|O<sub>2</sub> furnace]]. P type silicon is created when group III elements like boron, indium or gallium are used as the doping agent. The addition of these elements causes the silicon to have an abundance of positive charge carriers called “holes”. The “P” stands for “positive” [https://waferpro.com/what-are-p-type-and-n-type-silicon-wafers/].
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The '''Silicon Wafer (P-type) SiO<sub>2</sub>''' can be made from a [[Silicon Wafer (P-type)|Silicon Wafer (P-type)]] using the [[O2 Furnace|O<sub>2</sub> furnace]].  
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P type silicon is created when group III elements such as boron, indium or gallium are used as the doping agent. The addition of these elements results in an excess of positive charge carriers in the silicon, known as "holes." The term "P" in "P-type" stands for “positive"[https://waferpro.com/what-are-p-type-and-n-type-silicon-wafers/].
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The SiO<sub>2</sub> layer, also called dieletric layer, is an electrical insulator, functioning as a barrier for electrons [https://en.wikipedia.org/wiki/Dielectric].  
  
  
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==Recipes==
 
==Recipes==
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===Annealing Furnace===
 
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{| class="wikitable sortable collapsible"
 
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! Outputs
 
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! Recipe
 
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* [[Image:silicon_wafer.png|link=Silicon Wafer (P-type)|32px|alt=Silicon Wafer (P-type)|[[Silicon Wafer (P-type)|Silicon Wafer (P-type)]]]] [[Silicon Wafer (P-type)|Silicon Wafer (P-type)]]
 
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* [[Silicon Wafer (P-type) Unannealed]]
 
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* [[Cartridge (Nitrogen)]]
 
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| {{Inventory|
 
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{{Inventory/Slot|index=2|title=Fuel|image=Fuel.png|link=List of Fuels}}
 
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{{Inventory/Slot|index=1|title=Cartridge (Nitrogen)|image=Vessel_cartridge.png|link=Cartridge (Nitrogen)|amount=1}}
 
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{{Inventory/Slot|index=0|title=Silicon Wafer (P-type) Unannealed|image=silicon_wafer.png|link=Silicon Wafer (P-type) Unannealed}}
 
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{{Inventory/Slot|index=3|title=Silicon Wafer (P-type)|image=silicon_wafer.png|link=Silicon Wafer (P-type)}}
 
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|type=o2_furnace|shapeless=false}}
 
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===O<sub>2</sub> Furnace===
 
===O<sub>2</sub> Furnace===
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|type=o2_furnace|shapeless=false}}
 
|type=o2_furnace|shapeless=false}}
 
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==History==
 
==History==

Latest revision as of 03:46, 19 April 2024

Description

The Silicon Wafer (P-type) SiO2 can be made from a Silicon Wafer (P-type) using the O2 furnace.

P type silicon is created when group III elements such as boron, indium or gallium are used as the doping agent. The addition of these elements results in an excess of positive charge carriers in the silicon, known as "holes." The term "P" in "P-type" stands for “positive"[1].

The SiO2 layer, also called dieletric layer, is an electrical insulator, functioning as a barrier for electrons [2].


Properties

Name Value
Release Version 1.3.2

Recipes

O2 Furnace

Outputs Components Recipe
Fuel
Cartridge (Oxygen)
1
Silicon Wafer (P-type)
Silicon Wafer (P-type) SiO2


History

Gallery

References

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