Difference between revisions of "Silicon Wafer (P-type)"
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==Description== | ==Description== | ||
| − | The '''Silicon Wafer (P-type)''' can be made by annealing the [[Silicon Wafer (P-type) Unannealed|unannealed silicon safer (P-type)]] | + | The '''Silicon Wafer (P-type)''' can be made by annealing the [[Silicon Wafer (P-type) Unannealed|unannealed silicon safer (P-type)]] in the [[Annealing Furnace|annealing furnace]]. |
| + | P-type silicon is formed when group III elements such as boron, indium, or gallium are used as doping agents. The addition of these elements results in an excess of positive charge carriers in the silicon, known as "holes." The term "P" in "P-type" stands for “positive” [https://waferpro.com/what-are-p-type-and-n-type-silicon-wafers/]. | ||
==Properties== | ==Properties== | ||
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| − | === | + | ===O<sub>2</sub> Furnace=== |
{| class="wikitable sortable collapsible" | {| class="wikitable sortable collapsible" | ||
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| − | * [[Image:silicon_wafer.png|link=Silicon Wafer (P-type) SiO2|32px|alt=Silicon Wafer (P-type) SiO2|[[Silicon Wafer (P-type) SiO2|Silicon Wafer (P-type) | + | * [[Image:silicon_wafer.png|link=Silicon Wafer (P-type) SiO2|32px|alt=Silicon Wafer (P-type) SiO2|[[Silicon Wafer (P-type) SiO2|Silicon Wafer (P-type) SiO<sub>2</sub>]]]] [[Silicon Wafer (P-type) SiO2|Silicon Wafer (P-type) SiO<sub>2</sub>]] |
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* [[Silicon Wafer (P-type)]] | * [[Silicon Wafer (P-type)]] | ||
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{{Inventory/Slot|index=1|title=Cartridge (Oxygen)|image=Vessel_cartridge.png|link=Cartridge (Oxygen)|amount=1}} | {{Inventory/Slot|index=1|title=Cartridge (Oxygen)|image=Vessel_cartridge.png|link=Cartridge (Oxygen)|amount=1}} | ||
{{Inventory/Slot|index=0|title=Silicon Wafer (P-type)|image=silicon_wafer.png|link=Silicon Wafer (P-type)}} | {{Inventory/Slot|index=0|title=Silicon Wafer (P-type)|image=silicon_wafer.png|link=Silicon Wafer (P-type)}} | ||
| − | {{Inventory/Slot|index=3|title=Silicon Wafer (P-type) | + | {{Inventory/Slot|index=3|title=Silicon Wafer (P-type) SiO<sub>2</sub>|image=silicon_wafer.png|link=Silicon Wafer (P-type) SiO2}} |
|type=o2_furnace|shapeless=false}} | |type=o2_furnace|shapeless=false}} | ||
|} | |} | ||
Latest revision as of 03:31, 19 April 2024
Description
The Silicon Wafer (P-type) can be made by annealing the unannealed silicon safer (P-type) in the annealing furnace.
P-type silicon is formed when group III elements such as boron, indium, or gallium are used as doping agents. The addition of these elements results in an excess of positive charge carriers in the silicon, known as "holes." The term "P" in "P-type" stands for “positive” [1].
Properties
| Name | Value |
|---|---|
| Release Version | 1.3.2 |
Recipes
Annealing Furnace
| Outputs | Components | Recipe |
|---|---|---|
  1  |
O2 Furnace
| Outputs | Components | Recipe |
|---|---|---|
1 |