Difference between revisions of "Silicon Wafer (N-type)"
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==Description== | ==Description== | ||
| − | The '''silicon wafer (N-type)''' can be made by annealing the [[Silicon Wafer (N-type) Unannealed|unannealed silicon safer (N-type)]] using the [[Annealing Furnace|annealing furnace]]. N-type silicon occurs when group V elements like phosphorus, arsenic, or antimony are used to dope the silicon. This gives the silicon an abundance of negative charge carriers called “electrons”. Hence the “N” for “negative” [https://waferpro.com/what-are-p-type-and-n-type-silicon-wafers/]. | + | The '''silicon wafer (N-type)''' can be made by annealing the [[Silicon Wafer (N-type) Unannealed|unannealed silicon safer (N-type)]] using the [[Annealing Furnace|annealing furnace]]. |
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| + | N-type silicon occurs when group V elements like phosphorus, arsenic, or antimony are used to dope the silicon. This gives the silicon an abundance of negative charge carriers called “electrons”. Hence the “N” for “negative” [https://waferpro.com/what-are-p-type-and-n-type-silicon-wafers/]. | ||
==Properties== | ==Properties== | ||
Revision as of 21:56, 18 April 2024
Description
The silicon wafer (N-type) can be made by annealing the unannealed silicon safer (N-type) using the annealing furnace.
N-type silicon occurs when group V elements like phosphorus, arsenic, or antimony are used to dope the silicon. This gives the silicon an abundance of negative charge carriers called “electrons”. Hence the “N” for “negative” [1].
Properties
| Name | Value |
|---|---|
| Release Version | 1.3.2 |
Recipes
Annealing Furnace
| Outputs | Components | Recipe |
|---|---|---|
  1  |
O2 Furnace
| Outputs | Components | Recipe |
|---|---|---|
1 |