Difference between revisions of "Silicon Wafer (N-type)"

Revision as of 21:39, 18 April 2024

The Silicon Wafer (N-type) can be made by annealing the unannealed silicon safer (N-type) using the annealing furnace. This silicon wafer has negative ions implanted in the silicon.

Name	Value
Release Version	1.3.2

Outputs	Components	Recipe
Silicon Wafer (N-type)	Silicon Wafer (N-type) Unannealed Cartridge (Nitrogen)	1

Outputs	Components	Recipe
Silicon Wafer (N-type) SiO₂	Silicon Wafer (N-type) Cartridge (Oxygen)	1

Revision as of 21:38, 18 April 2024 (view source) Admin (talk \| contribs) (Created page with "==Description== The '''Silicon Wafer (N-type)''' can be made by annealing the unannealed silicon safer (N-type) using the Annealing Fur...")		Revision as of 21:39, 18 April 2024 (view source) Admin (talk \| contribs) Newer edit →
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	==Description==		==Description==
−	The '''Silicon Wafer (N-type)''' can be made by annealing the [[Silicon Wafer (N-type) Unannealed\|unannealed silicon safer (N-type)]] using the [[Annealing Furnace\|annealing furnace]]. ~~After the ion implantation process, the~~ silicon ~~crystal is disorganized by the ion's impacts. During the annealing process the~~ wafer ~~is heated and cooled several times to reorganize the crystal lattice. The '''Silicon Wafer (P-type) Unannealed''' can be annealed~~ in the ~~[[Annealing Furnace\|annealing furnace]]~~.	+	The '''Silicon Wafer (N-type)''' can be made by annealing the [[Silicon Wafer (N-type) Unannealed\|unannealed silicon safer (N-type)]] using the [[Annealing Furnace\|annealing furnace]]. This silicon wafer has negative ions implanted in the silicon.